Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

Wei Tsung Chen*, Shih Yi Lo, Shih Chin Kao, Hsiao-Wen Zan, Chuang Chuang Tsai, Jian Hong Lin, Chun Hsiang Fang, Chung Chun Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

141 Scopus citations

Abstract

This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} 4 and 371times 10 -4 respectively, is achieved by annealing and passivation.

Original languageEnglish
Article number6026903
Pages (from-to)1552-1554
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number11
DOIs
StatePublished - 1 Nov 2011

Keywords

  • Bias stress
  • IGZO
  • Stability

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