Oxide-nitride-oxide antifuse reliability

Steve Chiang*, Roger Wang, Jacob Chen, Ken Hayes, John McCollum, Esmat Hamdy, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the l/E field acceleration model.

Original languageEnglish
Pages (from-to)186-192
Number of pages7
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Dec 1990
EventTwenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA
Duration: 27 Mar 199029 Mar 1990

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