Oxide-nitride-oxide antifuse reliability

Steve Chiang; Roger Wang; Jacob Chen; Ken Hayes; John McCollum; Esmat Hamdy; Chen-Ming Hu

doi:10.1109/RELPHY.1990.66084

Oxide-nitride-oxide antifuse reliability

Steve Chiang^*, Roger Wang, Jacob Chen, Ken Hayes, John McCollum, Esmat Hamdy, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the l/E field acceleration model.

Original language	English
Pages (from-to)	186-192
Number of pages	7
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/RELPHY.1990.66084
State	Published - 1 Dec 1990
Event	Twenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA Duration: 27 Mar 1990 → 29 Mar 1990

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@article{e9a5bcd1286443bfbc5fd04d88e2c448,

title = "Oxide-nitride-oxide antifuse reliability",

abstract = "Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the l/E field acceleration model.",

author = "Steve Chiang and Roger Wang and Jacob Chen and Ken Hayes and John McCollum and Esmat Hamdy and Chen-Ming Hu",

year = "1990",

month = dec,

day = "1",

doi = "10.1109/RELPHY.1990.66084",

language = "English",

pages = "186--192",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "null ; Conference date: 27-03-1990 Through 29-03-1990",

}

TY - JOUR

T1 - Oxide-nitride-oxide antifuse reliability

AU - Chiang, Steve

AU - Wang, Roger

AU - Chen, Jacob

AU - Hayes, Ken

AU - McCollum, John

AU - Hamdy, Esmat

AU - Hu, Chen-Ming

PY - 1990/12/1

Y1 - 1990/12/1

N2 - Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the l/E field acceleration model.

AB - Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the l/E field acceleration model.

UR - http://www.scopus.com/inward/record.url?scp=0025673778&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.1990.66084

DO - 10.1109/RELPHY.1990.66084

M3 - Conference article

AN - SCOPUS:0025673778

SP - 186

EP - 192

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

Y2 - 27 March 1990 through 29 March 1990

ER -

Oxide-nitride-oxide antifuse reliability

Abstract

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