Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the l/E field acceleration model.
|Number of pages||7|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Dec 1990|
|Event||Twenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA|
Duration: 27 Mar 1990 → 29 Mar 1990