Oxide burn-in model

Reza Moazzami*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

A model has previously been proposed for predicting the voltage and temperature dependence of oxide lifetime. It is now extended to incorporate the effects of burn-in voltage, temperature, and time on the subsequent lifetime of the oxide. Based on this model and simple ramp-breakdown measurement, burn-in conditions can be optimized to obtain a low burn-in yield loss while meeting a desired reliability requirement.

Original languageEnglish
Pages (from-to)77-78
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1989
EventNinth Symposium on VLSI Technology 1989 - Digest of Technical Papers - Kyoto, Jpn
Duration: 22 May 198925 May 1989

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