Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

B. Gao*, J. F. Kang, Y. S. Chen, F. F. Zhang, B. Chen, P. Huang, L. F. Liu, X. Y. Liu, Y. Y. Wang, X. A. Tran, Z. R. Wang, H. Y. Yu, Albert Chin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

23 Scopus citations

Abstract

A unified microscopic principle is proposed to clarify resistive switching behaviors of transition metal oxide based resistive random access memories (RRAM) for the first time. In this unified microscopic principle, both unipolar and bipolar switching characteristics of RRAM are correlated with the distribution of localized oxygen vacancies in the oxide switching layer, which is governed by the generation and recombination with dissociative oxygen ions. Based on the proposed microscopic principle, an atomistic simulation method is developed to evaluate critical memory performance, and successfully conduct the device optimization. The experimental data are well in line with the developed simulation method.

Original languageEnglish
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - 1 Dec 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: 5 Dec 20117 Dec 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period5/12/117/12/11

Fingerprint Dive into the research topics of 'Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching'. Together they form a unique fingerprint.

Cite this