Oxidation study of ge condensation on sgoi nanowire biosensor fabrication

Kow-Ming Chang, Chu Feng Chen, Chiung Hui Lai, Chin Ning Wu, Cheng Ting Hsieh, Yu Bin Wang, Chung Hsien Liu, Kuo Chin Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Ge condensation method is effective in increasing the Ge fraction of Ge in SGOI. Previous studies by the authors confirmed a correlation between the Ge fraction and the sensitivity of the SiGe nano-wire sensor. To understand how Ge condensation on an SGOI nano-wire sensor helps to optimize oxidation conditions and sensitivity, the effect of oxidizing gas and the SiGe/aα-Si stacked structure on the movement of Ge is investigated. The analytical results reveal that the sensitivity of SiGe nano-wires can be optimized by stacking an Si1-xGex layer that contains 14% Ge on a 200 A-thick aα-Si layer and treating the stack with O2 gas diluted by 13% N2 for 3 min.

Original languageEnglish
Title of host publicationSensors, Actuators, and Microsystems (General) - 221st ECS Meeting
Pages55-66
Number of pages12
Edition14
DOIs
StatePublished - 22 Oct 2013
EventSymposium on Sensors, Actuators, and Microsystems General Session - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number14
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Sensors, Actuators, and Microsystems General Session - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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