Oxidation study of ge condensation on sgoi nanowire biosensor fabrication

Kow-Ming Chang; Chu Feng Chen; Chiung Hui Lai; Chin Ning Wu; Cheng Ting Hsieh; Yu Bin Wang; Chung Hsien Liu; Kuo Chin Chang

doi:10.1149/04514.0055ecst

Oxidation study of ge condensation on sgoi nanowire biosensor fabrication

Kow-Ming Chang, Chu Feng Chen, Chiung Hui Lai, Chin Ning Wu, Cheng Ting Hsieh, Yu Bin Wang, Chung Hsien Liu, Kuo Chin Chang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The Ge condensation method is effective in increasing the Ge fraction of Ge in SGOI. Previous studies by the authors confirmed a correlation between the Ge fraction and the sensitivity of the SiGe nano-wire sensor. To understand how Ge condensation on an SGOI nano-wire sensor helps to optimize oxidation conditions and sensitivity, the effect of oxidizing gas and the SiGe/aα-Si stacked structure on the movement of Ge is investigated. The analytical results reveal that the sensitivity of SiGe nano-wires can be optimized by stacking an Si1-xGex layer that contains 14% Ge on a 200 A-thick aα-Si layer and treating the stack with O₂ gas diluted by 13% N2 for 3 min.

Original language	English
Title of host publication	Sensors, Actuators, and Microsystems (General) - 221st ECS Meeting
Pages	55-66
Number of pages	12
Edition	14
DOIs	https://doi.org/10.1149/04514.0055ecst
State	Published - 22 Oct 2013
Event	Symposium on Sensors, Actuators, and Microsystems General Session - 221st ECS Meeting - Seattle, WA, United States Duration: 6 May 2012 → 10 May 2012

Publication series

Name	ECS Transactions
Number	14
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Sensors, Actuators, and Microsystems General Session - 221st ECS Meeting
Country	United States
City	Seattle, WA
Period	6/05/12 → 10/05/12

Access to Document

10.1149/04514.0055ecst

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title = "Oxidation study of ge condensation on sgoi nanowire biosensor fabrication",

abstract = "The Ge condensation method is effective in increasing the Ge fraction of Ge in SGOI. Previous studies by the authors confirmed a correlation between the Ge fraction and the sensitivity of the SiGe nano-wire sensor. To understand how Ge condensation on an SGOI nano-wire sensor helps to optimize oxidation conditions and sensitivity, the effect of oxidizing gas and the SiGe/aα-Si stacked structure on the movement of Ge is investigated. The analytical results reveal that the sensitivity of SiGe nano-wires can be optimized by stacking an Si1-xGex layer that contains 14% Ge on a 200 A-thick aα-Si layer and treating the stack with O2 gas diluted by 13% N2 for 3 min.",

author = "Kow-Ming Chang and Chen, {Chu Feng} and Lai, {Chiung Hui} and Wu, {Chin Ning} and Hsieh, {Cheng Ting} and Wang, {Yu Bin} and Liu, {Chung Hsien} and Chang, {Kuo Chin}",

year = "2013",

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series = "ECS Transactions",

number = "14",

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booktitle = "Sensors, Actuators, and Microsystems (General) - 221st ECS Meeting",

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Chang, K-M, Chen, CF, Lai, CH, Wu, CN, Hsieh, CT, Wang, YB, Liu, CH & Chang, KC 2013, Oxidation study of ge condensation on sgoi nanowire biosensor fabrication. in Sensors, Actuators, and Microsystems (General) - 221st ECS Meeting. 14 edn, ECS Transactions, no. 14, vol. 45, pp. 55-66, Symposium on Sensors, Actuators, and Microsystems General Session - 221st ECS Meeting, Seattle, WA, United States, 6/05/12. https://doi.org/10.1149/04514.0055ecst

Oxidation study of ge condensation on sgoi nanowire biosensor fabrication. / Chang, Kow-Ming; Chen, Chu Feng; Lai, Chiung Hui; Wu, Chin Ning; Hsieh, Cheng Ting; Wang, Yu Bin; Liu, Chung Hsien; Chang, Kuo Chin.

Sensors, Actuators, and Microsystems (General) - 221st ECS Meeting. 14. ed. 2013. p. 55-66 (ECS Transactions; Vol. 45, No. 14).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Oxidation study of ge condensation on sgoi nanowire biosensor fabrication

AU - Chang, Kow-Ming

AU - Chen, Chu Feng

AU - Lai, Chiung Hui

AU - Wu, Chin Ning

AU - Hsieh, Cheng Ting

AU - Wang, Yu Bin

AU - Liu, Chung Hsien

AU - Chang, Kuo Chin

PY - 2013/10/22

Y1 - 2013/10/22

N2 - The Ge condensation method is effective in increasing the Ge fraction of Ge in SGOI. Previous studies by the authors confirmed a correlation between the Ge fraction and the sensitivity of the SiGe nano-wire sensor. To understand how Ge condensation on an SGOI nano-wire sensor helps to optimize oxidation conditions and sensitivity, the effect of oxidizing gas and the SiGe/aα-Si stacked structure on the movement of Ge is investigated. The analytical results reveal that the sensitivity of SiGe nano-wires can be optimized by stacking an Si1-xGex layer that contains 14% Ge on a 200 A-thick aα-Si layer and treating the stack with O2 gas diluted by 13% N2 for 3 min.

AB - The Ge condensation method is effective in increasing the Ge fraction of Ge in SGOI. Previous studies by the authors confirmed a correlation between the Ge fraction and the sensitivity of the SiGe nano-wire sensor. To understand how Ge condensation on an SGOI nano-wire sensor helps to optimize oxidation conditions and sensitivity, the effect of oxidizing gas and the SiGe/aα-Si stacked structure on the movement of Ge is investigated. The analytical results reveal that the sensitivity of SiGe nano-wires can be optimized by stacking an Si1-xGex layer that contains 14% Ge on a 200 A-thick aα-Si layer and treating the stack with O2 gas diluted by 13% N2 for 3 min.

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