Oxidation of Cu and Cu3Ge thin films

H. K. Liou*, J. S. Huang, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250°C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu 3Ge oxidize only above 450°C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450°C. Above 510°C, GeO 2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu 3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization.

Original languageEnglish
Pages (from-to)5443-5445
Number of pages3
JournalJournal of Applied Physics
Issue number10
StatePublished - 1 Dec 1995

Fingerprint Dive into the research topics of 'Oxidation of Cu and Cu<sub>3</sub>Ge thin films'. Together they form a unique fingerprint.

Cite this