Oxidation of Cu and Cu3Ge thin films

H. K. Liou*, J. S. Huang, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250°C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu 3Ge oxidize only above 450°C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450°C. Above 510°C, GeO 2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu 3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization.

Original languageEnglish
Pages (from-to)5443-5445
Number of pages3
JournalJournal of Applied Physics
Volume77
Issue number10
DOIs
StatePublished - 1 Dec 1995

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