Oxidation and structure scheme studies for sensitivity improvement of Si 1-xGe x nanowire biosensor

Chu Feng Chen*, Kow-Ming Chang, Yu Bin Wang, Chung Hsien Liu, Chin Ning Wu, Cheng Ting Hsieh, Chiung Hui Lai, Kuo Chin Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires's conductance. In this study, we discuss SiGe nanowire structural effect by changing Si/SiGe stacked ratio and oxidation effect in different annealing ambient. The optimized Si/SiGe stacked structure with suitable oxidation process has more twice enhancement of sensitivity compared to conventional SiNWs biosensor.

Original languageEnglish
Title of host publicationIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
Pages124-125
Number of pages2
DOIs
StatePublished - 30 Jul 2012
Event10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, Japan
Duration: 9 May 201211 May 2012

Publication series

NameIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Conference

Conference10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
CountryJapan
CityOsaka
Period9/05/1211/05/12

Keywords

  • Bisosensor
  • Ge-condendation
  • Nanowire
  • SiGe

Fingerprint Dive into the research topics of 'Oxidation and structure scheme studies for sensitivity improvement of Si <sub>1-x</sub>Ge <sub>x</sub> nanowire biosensor'. Together they form a unique fingerprint.

  • Cite this

    Chen, C. F., Chang, K-M., Wang, Y. B., Liu, C. H., Wu, C. N., Hsieh, C. T., Lai, C. H., & Chang, K. C. (2012). Oxidation and structure scheme studies for sensitivity improvement of Si 1-xGe x nanowire biosensor. In IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai (pp. 124-125). [6218613] (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2012.6218613