@inproceedings{0ada3e920ef3482eb17ed8e5058e150e,
title = "Oxidation and structure scheme studies for sensitivity improvement of Si 1-xGe x nanowire biosensor",
abstract = "Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires's conductance. In this study, we discuss SiGe nanowire structural effect by changing Si/SiGe stacked ratio and oxidation effect in different annealing ambient. The optimized Si/SiGe stacked structure with suitable oxidation process has more twice enhancement of sensitivity compared to conventional SiNWs biosensor.",
keywords = "Bisosensor, Ge-condendation, Nanowire, SiGe",
author = "Chen, {Chu Feng} and Kow-Ming Chang and Wang, {Yu Bin} and Liu, {Chung Hsien} and Wu, {Chin Ning} and Hsieh, {Cheng Ting} and Lai, {Chiung Hui} and Chang, {Kuo Chin}",
year = "2012",
month = jul,
day = "30",
doi = "10.1109/IMFEDK.2012.6218613",
language = "English",
isbn = "9781467308359",
series = "IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai",
pages = "124--125",
booktitle = "IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai",
note = "null ; Conference date: 09-05-2012 Through 11-05-2012",
}