Oxidation and structure scheme studies for sensitivity improvement of Si 1-xGe x nanowire biosensor

Chu Feng Chen; Kow-Ming Chang; Yu Bin Wang; Chung Hsien Liu; Chin Ning Wu; Cheng Ting Hsieh; Chiung Hui Lai; Kuo Chin Chang

doi:10.1109/IMFEDK.2012.6218613

Oxidation and structure scheme studies for sensitivity improvement of Si _1-xGe _x nanowire biosensor

Chu Feng Chen^*, Kow-Ming Chang, Yu Bin Wang, Chung Hsien Liu, Chin Ning Wu, Cheng Ting Hsieh, Chiung Hui Lai, Kuo Chin Chang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires's conductance. In this study, we discuss SiGe nanowire structural effect by changing Si/SiGe stacked ratio and oxidation effect in different annealing ambient. The optimized Si/SiGe stacked structure with suitable oxidation process has more twice enhancement of sensitivity compared to conventional SiNWs biosensor.

Original language	English
Title of host publication	IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
Pages	124-125
Number of pages	2
DOIs	https://doi.org/10.1109/IMFEDK.2012.6218613
State	Published - 30 Jul 2012
Event	10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, Japan Duration: 9 May 2012 → 11 May 2012

Publication series

Name	IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Conference

Conference	10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
Country	Japan
City	Osaka
Period	9/05/12 → 11/05/12

Keywords

Bisosensor
Ge-condendation
Nanowire
SiGe

Access to Document

10.1109/IMFEDK.2012.6218613

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Oxidation and structure scheme studies for sensitivity improvement of Si <sub>1-x</sub>Ge <sub>x</sub> nanowire biosensor'. Together they form a unique fingerprint.

Cite this

Chen, C. F., Chang, K-M., Wang, Y. B., Liu, C. H., Wu, C. N., Hsieh, C. T., Lai, C. H., & Chang, K. C. (2012). Oxidation and structure scheme studies for sensitivity improvement of Si _1-xGe _x nanowire biosensor. In IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai (pp. 124-125). [6218613] (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2012.6218613

Chen, Chu Feng ; Chang, Kow-Ming ; Wang, Yu Bin ; Liu, Chung Hsien ; Wu, Chin Ning ; Hsieh, Cheng Ting ; Lai, Chiung Hui ; Chang, Kuo Chin. / Oxidation and structure scheme studies for sensitivity improvement of Si _1-xGe _x nanowire biosensor. IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. pp. 124-125 (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).

@inproceedings{0ada3e920ef3482eb17ed8e5058e150e,

title = "Oxidation and structure scheme studies for sensitivity improvement of Si 1-xGe x nanowire biosensor",

abstract = "Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires's conductance. In this study, we discuss SiGe nanowire structural effect by changing Si/SiGe stacked ratio and oxidation effect in different annealing ambient. The optimized Si/SiGe stacked structure with suitable oxidation process has more twice enhancement of sensitivity compared to conventional SiNWs biosensor.",

keywords = "Bisosensor, Ge-condendation, Nanowire, SiGe",

author = "Chen, {Chu Feng} and Kow-Ming Chang and Wang, {Yu Bin} and Liu, {Chung Hsien} and Wu, {Chin Ning} and Hsieh, {Cheng Ting} and Lai, {Chiung Hui} and Chang, {Kuo Chin}",

year = "2012",

month = jul,

day = "30",

doi = "10.1109/IMFEDK.2012.6218613",

language = "English",

isbn = "9781467308359",

series = "IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai",

pages = "124--125",

booktitle = "IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai",

note = "null ; Conference date: 09-05-2012 Through 11-05-2012",

}

Chen, CF, Chang, K-M, Wang, YB, Liu, CH, Wu, CN, Hsieh, CT, Lai, CH & Chang, KC 2012, Oxidation and structure scheme studies for sensitivity improvement of Si _1-xGe _x nanowire biosensor. in IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai., 6218613, IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai, pp. 124-125, 10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012, Osaka, Japan, 9/05/12. https://doi.org/10.1109/IMFEDK.2012.6218613

Oxidation and structure scheme studies for sensitivity improvement of Si _1-xGe _x nanowire biosensor. / Chen, Chu Feng; Chang, Kow-Ming; Wang, Yu Bin; Liu, Chung Hsien; Wu, Chin Ning; Hsieh, Cheng Ting; Lai, Chiung Hui; Chang, Kuo Chin.

IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. p. 124-125 6218613 (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Oxidation and structure scheme studies for sensitivity improvement of Si 1-xGe x nanowire biosensor

AU - Chen, Chu Feng

AU - Chang, Kow-Ming

AU - Wang, Yu Bin

AU - Liu, Chung Hsien

AU - Wu, Chin Ning

AU - Hsieh, Cheng Ting

AU - Lai, Chiung Hui

AU - Chang, Kuo Chin

PY - 2012/7/30

Y1 - 2012/7/30

N2 - Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires's conductance. In this study, we discuss SiGe nanowire structural effect by changing Si/SiGe stacked ratio and oxidation effect in different annealing ambient. The optimized Si/SiGe stacked structure with suitable oxidation process has more twice enhancement of sensitivity compared to conventional SiNWs biosensor.

AB - Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires's conductance. In this study, we discuss SiGe nanowire structural effect by changing Si/SiGe stacked ratio and oxidation effect in different annealing ambient. The optimized Si/SiGe stacked structure with suitable oxidation process has more twice enhancement of sensitivity compared to conventional SiNWs biosensor.

KW - Bisosensor

KW - Ge-condendation

KW - Nanowire

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=84864208744&partnerID=8YFLogxK

U2 - 10.1109/IMFEDK.2012.6218613

DO - 10.1109/IMFEDK.2012.6218613

M3 - Conference contribution

AN - SCOPUS:84864208744

SN - 9781467308359

T3 - IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

SP - 124

EP - 125

BT - IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Y2 - 9 May 2012 through 11 May 2012

ER -

Chen CF, Chang K-M, Wang YB, Liu CH, Wu CN, Hsieh CT et al. Oxidation and structure scheme studies for sensitivity improvement of Si _1-xGe _x nanowire biosensor. In IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. 2012. p. 124-125. 6218613. (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2012.6218613