Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

Artur Useinov*, Oleg Mryasov, Jürgen Kosel

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series.

Original languageEnglish
Pages (from-to)2844-2848
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume324
Issue number18
DOIs
StatePublished - 1 Sep 2012

Keywords

  • Magnetic tunnel junction (MTJ)
  • Spinelectronic
  • Tunneling magnetoresistance (TMR)

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