Output power of AlGaInP light emitting diode improved by double roughening AlGaInP surfaces

Ping W. Huang*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

An AlGaInP-based vertical light emitting diode (LED) comprising double roughened (GaP and n-AlGaInP) surfaces and a bottom metal reflector was fabricated by surface-etching and wafer-bonding technologies. The roughened GaP surface was created by photolithography and wet etching, while the AlGaInP surface was roughened by inductively coupled plasma dry etching. The output power of the double roughened LED could reach 5.88 mW, which was 2.56 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface and can redirect photons.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number5
DOIs
StatePublished - 26 Mar 2010

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