Output power enhancement of light-emitting diodes with defect passivation layer

Ming Hua Lo*, Po Min Tu, Yuh Jen Cheng, Chao Hsun Wang, Cheng Wei Hung, Shih Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing Chung Wang, Chun Yen Chang, Che Ming Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO 2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ∼4×10 7 cm -2 . The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices V
DOIs
StatePublished - 7 May 2010
EventGallium Nitride Materials and Devices V - San Francisco, CA, United States
Duration: 25 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7602
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices V
CountryUnited States
CitySan Francisco, CA
Period25/01/1028/01/10

Keywords

  • Defect passivation
  • GaN

Fingerprint Dive into the research topics of 'Output power enhancement of light-emitting diodes with defect passivation layer'. Together they form a unique fingerprint.

  • Cite this

    Lo, M. H., Tu, P. M., Cheng, Y. J., Wang, C. H., Hung, C. W., Hsu, S. C., Kuo, H-C., Zan, H-W., Wang, S. C., Chang, C. Y., & Liu, C. M. (2010). Output power enhancement of light-emitting diodes with defect passivation layer. In Gallium Nitride Materials and Devices V [76021X] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7602). https://doi.org/10.1117/12.841513