We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO
deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ∼4×10
. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.