Origins of performance enhancement in independent double-gated poly-si nanowire devices

Hsing Hui Hsu*, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this paper, we characterize and compare the characteristics of a poly-Si nanowire (NW) device with independent double-gated configuration under different operation modes. In the device, the tiny NW channels are surrounded by an inverted-T-shaped gate and a top gate. It is found that the device under double-gate (DG) mode exhibits significantly better performance with respect to the two single-gate (SG) modes, as indicated by a higher current drive than the combined sum of the two SG modes and a smaller subthreshold swing of less than 100 mV/dec. Origins of such improvement have been identified to be due to the elimination of the back-gate effect as well as an enhancement in the effective mobility with the DG operation.

Original languageEnglish
Article number5422719
Pages (from-to)905-912
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume57
Issue number4
DOIs
StatePublished - 1 Apr 2010

Keywords

  • Double gate (DG)
  • Mobility
  • Nanowire (NW)
  • Poly-Si
  • Thin-film transistor (TFT)

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