We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.
|Number of pages||5|
|Journal||Journal of Physics: Conference Series|
|State||Published - 15 Aug 2017|
|Event||33rd International Conference on the Physics of Semiconductors, ICPS 2016 - Beijing, China|
Duration: 31 Jul 2016 → 5 Aug 2016