Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

K. S. Zhuravlev; D. V. Gulyaev; I. A. Aleksandrov; T. V. Malin; V. G. Mansurov; Yu G. Galitsyn; K. A. Konfederatova; Yen Chun Chen; Wen-Hao Chang

doi:10.1088/1742-6596/864/1/012007

Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

K. S. Zhuravlev, D. V. Gulyaev, I. A. Aleksandrov, T. V. Malin, V. G. Mansurov, Yu G. Galitsyn, K. A. Konfederatova, Yen Chun Chen, Wen-Hao Chang

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10⁷-10⁹ cm^-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

Original language	English
Article number	012007
Number of pages	5
Journal	Journal of Physics: Conference Series
Volume	864
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/864/1/012007
State	Published - 15 Aug 2017
Event	33rd International Conference on the Physics of Semiconductors, ICPS 2016 - Beijing, China Duration: 31 Jul 2016 → 5 Aug 2016

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Zhuravlev, K. S., Gulyaev, D. V., Aleksandrov, I. A., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., Konfederatova, K. A., Chen, Y. C., & Chang, W-H. (2017). Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy. Journal of Physics: Conference Series, 864(1), [012007]. https://doi.org/10.1088/1742-6596/864/1/012007

@article{0eb91b95e62e4803a43c16e556d08296,

title = "Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy",

abstract = "We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.",

author = "Zhuravlev, {K. S.} and Gulyaev, {D. V.} and Aleksandrov, {I. A.} and Malin, {T. V.} and Mansurov, {V. G.} and Galitsyn, {Yu G.} and Konfederatova, {K. A.} and Chen, {Yen Chun} and Wen-Hao Chang",

year = "2017",

month = aug,

day = "15",

doi = "10.1088/1742-6596/864/1/012007",

language = "English",

volume = "864",

journal = "Journal of Physics: Conference Series",

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publisher = "IOP Publishing Ltd.",

number = "1",

note = "null ; Conference date: 31-07-2016 Through 05-08-2016",

}

Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy. / Zhuravlev, K. S.; Gulyaev, D. V.; Aleksandrov, I. A.; Malin, T. V.; Mansurov, V. G.; Galitsyn, Yu G.; Konfederatova, K. A.; Chen, Yen Chun; Chang, Wen-Hao.

In: Journal of Physics: Conference Series, Vol. 864, No. 1, 012007, 15.08.2017.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

AU - Zhuravlev, K. S.

AU - Gulyaev, D. V.

AU - Aleksandrov, I. A.

AU - Malin, T. V.

AU - Mansurov, V. G.

AU - Galitsyn, Yu G.

AU - Konfederatova, K. A.

AU - Chen, Yen Chun

AU - Chang, Wen-Hao

PY - 2017/8/15

Y1 - 2017/8/15

N2 - We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

AB - We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

UR - http://www.scopus.com/inward/record.url?scp=85028744850&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/864/1/012007

DO - 10.1088/1742-6596/864/1/012007

M3 - Conference article

AN - SCOPUS:85028744850

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012007

Y2 - 31 July 2016 through 5 August 2016

ER -