Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

K. S. Zhuravlev, D. V. Gulyaev, I. A. Aleksandrov, T. V. Malin, V. G. Mansurov, Yu G. Galitsyn, K. A. Konfederatova, Yen Chun Chen, Wen-Hao Chang

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Abstract

We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

Original languageEnglish
Article number012007
Number of pages5
JournalJournal of Physics: Conference Series
Volume864
Issue number1
DOIs
StatePublished - 15 Aug 2017
Event33rd International Conference on the Physics of Semiconductors, ICPS 2016 - Beijing, China
Duration: 31 Jul 20165 Aug 2016

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