Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors

Horng-Chih Lin, Cheng Hsiung Hung, Wei Chen Chen, Zer Ming Lin, Hsing Hui Hsu, Tiao Yuang Hunag

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Abstract

In this work we report the observation and characterization of a hysteresis phenomenon in the transfer characteristics of n -channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Such phenomenon is observed in devices with fully depleted channel and not treated with hydrogen-related anneal. The origin of the hysteresis is identified to be related to the electron trapping and detrapping processes associated with the deep-level traps in the grain boundaries of the poly-Si channel.

Original languageEnglish
Article number054502
JournalJournal of Applied Physics
Volume105
Issue number5
DOIs
StatePublished - 24 Mar 2009

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