Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO2 fluid treatment

Tsung Ming Tsai*, Kuan Chang Chang, Ting Chang Chang, Geng Wei Chang, Yong En Syu, Yu Ting Su, Guan Ru Liu, Kuo Hsiao Liao, Min Chen Chen, Hui Chun Huang, Ya-Hsiang Tai, Der Shin Gan, Cong Ye, Hao Wang, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiOx thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.

Original languageEnglish
Article number6355892
Pages (from-to)1693-1695
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
StatePublished - 12 Nov 2012


  • Hopping conduction
  • hydration-dehydration reaction
  • resistance random access memory (RRAM)
  • supercritical fluid

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