Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO2 fluid treatment

Tsung Ming Tsai; Kuan Chang Chang; Ting Chang Chang; Geng Wei Chang; Yong En Syu; Yu Ting Su; Guan Ru Liu; Kuo Hsiao Liao; Min Chen Chen; Hui Chun Huang; Ya-Hsiang Tai; Der Shin Gan; Cong Ye; Hao Wang; Simon M. Sze

doi:10.1109/LED.2012.2217932

Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO₂ fluid treatment

Tsung Ming Tsai^*, Kuan Chang Chang, Ting Chang Chang, Geng Wei Chang, Yong En Syu, Yu Ting Su, Guan Ru Liu, Kuo Hsiao Liao, Min Chen Chen, Hui Chun Huang, Ya-Hsiang Tai, Der Shin Gan, Cong Ye, Hao Wang, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO₂ fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiO_x) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiO_x thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiO_x thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.

Original language	English
Article number	6355892
Pages (from-to)	1693-1695
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	12
DOIs	https://doi.org/10.1109/LED.2012.2217932
State	Published - 12 Nov 2012

Keywords

Hopping conduction
hydration-dehydration reaction
resistance random access memory (RRAM)
supercritical fluid

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Tsai, T. M., Chang, K. C., Chang, T. C., Chang, G. W., Syu, Y. E., Su, Y. T., Liu, G. R., Liao, K. H., Chen, M. C., Huang, H. C., Tai, Y-H., Gan, D. S., Ye, C., Wang, H., & Sze, S. M. (2012). Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO₂ fluid treatment. IEEE Electron Device Letters, 33(12), 1693-1695. [6355892]. https://doi.org/10.1109/LED.2012.2217932

Tsai, Tsung Ming ; Chang, Kuan Chang ; Chang, Ting Chang ; Chang, Geng Wei ; Syu, Yong En ; Su, Yu Ting ; Liu, Guan Ru ; Liao, Kuo Hsiao ; Chen, Min Chen ; Huang, Hui Chun ; Tai, Ya-Hsiang ; Gan, Der Shin ; Ye, Cong ; Wang, Hao ; Sze, Simon M. / Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO₂ fluid treatment. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 12. pp. 1693-1695.

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title = "Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO2 fluid treatment",

abstract = "In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiOx thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.",

keywords = "Hopping conduction, hydration-dehydration reaction, resistance random access memory (RRAM), supercritical fluid",

author = "Tsai, {Tsung Ming} and Chang, {Kuan Chang} and Chang, {Ting Chang} and Chang, {Geng Wei} and Syu, {Yong En} and Su, {Yu Ting} and Liu, {Guan Ru} and Liao, {Kuo Hsiao} and Chen, {Min Chen} and Huang, {Hui Chun} and Ya-Hsiang Tai and Gan, {Der Shin} and Cong Ye and Hao Wang and Sze, {Simon M.}",

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doi = "10.1109/LED.2012.2217932",

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Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO₂ fluid treatment. / Tsai, Tsung Ming; Chang, Kuan Chang; Chang, Ting Chang; Chang, Geng Wei; Syu, Yong En; Su, Yu Ting; Liu, Guan Ru; Liao, Kuo Hsiao; Chen, Min Chen; Huang, Hui Chun; Tai, Ya-Hsiang; Gan, Der Shin; Ye, Cong; Wang, Hao; Sze, Simon M.

In: IEEE Electron Device Letters, Vol. 33, No. 12, 6355892, 12.11.2012, p. 1693-1695.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Origin of hopping conduction in Sn-doped silicon oxide RRAM with supercritical CO2 fluid treatment

AU - Tsai, Tsung Ming

AU - Chang, Kuan Chang

AU - Chang, Ting Chang

AU - Chang, Geng Wei

AU - Syu, Yong En

AU - Su, Yu Ting

AU - Liu, Guan Ru

AU - Liao, Kuo Hsiao

AU - Chen, Min Chen

AU - Huang, Hui Chun

AU - Tai, Ya-Hsiang

AU - Gan, Der Shin

AU - Ye, Cong

AU - Wang, Hao

AU - Sze, Simon M.

PY - 2012/11/12

Y1 - 2012/11/12

N2 - In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiOx thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.

AB - In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiOx thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.

KW - Hopping conduction

KW - hydration-dehydration reaction

KW - resistance random access memory (RRAM)

KW - supercritical fluid

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