Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices

Kuan Chang Chang, Rui Zhang, Ting Chang Chang, Tsung Ming Tsai, J. C. Lou, Jung Hui Chen, Tai Fa Young, Min Chen Chen, Ya Liang Yang, Yin Chih Pan, Geng Wei Chang, Tian Jian Chu, Chih Cheng Shih, Jian Yu Chen, Chih Hung Pan, Yu Ting Su, Yong En Syu, Ya-Hsiang Tai, Simon M. Sze

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Abstract

In this letter, a double-active-layer (Zr:SiO x C:SiO x ) resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiO x layer. It can be observed that Zr:SiO x C:SiO x structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiO x ) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.

Original languageEnglish
Article number6488720
Pages (from-to)677-679
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number5
DOIs
StatePublished - 1 Apr 2013

Keywords

  • Conduction
  • graphene oxide
  • hopping
  • redox reaction
  • resistance random access memory (RRAM)

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    Chang, K. C., Zhang, R., Chang, T. C., Tsai, T. M., Lou, J. C., Chen, J. H., Young, T. F., Chen, M. C., Yang, Y. L., Pan, Y. C., Chang, G. W., Chu, T. J., Shih, C. C., Chen, J. Y., Pan, C. H., Su, Y. T., Syu, Y. E., Tai, Y-H., & Sze, S. M. (2013). Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices. IEEE Electron Device Letters, 34(5), 677-679. [6488720]. https://doi.org/10.1109/LED.2013.2250899