In this letter, a double-active-layer (Zr:SiO x C:SiO x ) resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiO x layer. It can be observed that Zr:SiO x C:SiO x structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiO x ) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.
- graphene oxide
- redox reaction
- resistance random access memory (RRAM)