On semipolar GaN(1011), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(1011)//GaN(1011) and ZnO//GaN. The other oriented ZnO domains then grow on faceted (1011) ZnO with ZnO(0002)//ZnO(1011) and ZnO//ZnO with good coherency with the (1011)-oriented grains.
- Chemical vapor deposition
- Thin films
- Transmission electron microscopy
- X-ray diffraction