Orientations of ZnO grown on GaN(1011)

Yi Sen Shih*, Pei Yi Lin, Lin Lung Wei, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

On semipolar GaN(1011), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(1011)//GaN(1011) and [1210]ZnO//[1210]GaN. The other oriented ZnO domains then grow on faceted (1011) ZnO with ZnO(0002)//ZnO(1011) and [2110]ZnO//[1101]ZnO with good coherency with the (1011)-oriented grains.

Original languageEnglish
Pages (from-to)92-94
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume9
Issue number1
DOIs
StatePublished - 1 Jan 2015

Keywords

  • Chemical vapor deposition
  • GaN
  • Thin films
  • Transmission electron microscopy
  • X-ray diffraction
  • ZnO

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