Orientations of ZnO grown on GaN(1011)

Yi Sen Shih; Pei Yi Lin; Lin Lung Wei; Li Chang

doi:10.1002/pssr.201409467

Orientations of ZnO grown on GaN(1011)

Yi Sen Shih^*, Pei Yi Lin, Lin Lung Wei, Li Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

On semipolar GaN(1011), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(1011)//GaN(1011) and [1210]ZnO//[1210]GaN. The other oriented ZnO domains then grow on faceted (1011) ZnO with ZnO(0002)//ZnO(1011) and [2110]ZnO//[1101]ZnO with good coherency with the (1011)-oriented grains.

Original language	English
Pages (from-to)	92-94
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1002/pssr.201409467
State	Published - 1 Jan 2015

Keywords

Chemical vapor deposition
GaN
Thin films
Transmission electron microscopy
X-ray diffraction
ZnO

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@article{00b17a90bada4304add425d67e3b4498,

title = "Orientations of ZnO grown on GaN(1011)",

abstract = "On semipolar GaN(1011), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(1011)//GaN(1011) and [1210]ZnO//[1210]GaN. The other oriented ZnO domains then grow on faceted (1011) ZnO with ZnO(0002)//ZnO(1011) and [2110]ZnO//[1101]ZnO with good coherency with the (1011)-oriented grains.",

keywords = "Chemical vapor deposition, GaN, Thin films, Transmission electron microscopy, X-ray diffraction, ZnO",

author = "Shih, {Yi Sen} and Lin, {Pei Yi} and Wei, {Lin Lung} and Li Chang",

year = "2015",

month = jan,

day = "1",

doi = "10.1002/pssr.201409467",

language = "English",

volume = "9",

pages = "92--94",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - Orientations of ZnO grown on GaN(1011)

AU - Shih, Yi Sen

AU - Lin, Pei Yi

AU - Wei, Lin Lung

AU - Chang, Li

PY - 2015/1/1

Y1 - 2015/1/1

N2 - On semipolar GaN(1011), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(1011)//GaN(1011) and [1210]ZnO//[1210]GaN. The other oriented ZnO domains then grow on faceted (1011) ZnO with ZnO(0002)//ZnO(1011) and [2110]ZnO//[1101]ZnO with good coherency with the (1011)-oriented grains.

AB - On semipolar GaN(1011), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X-ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(1011)//GaN(1011) and [1210]ZnO//[1210]GaN. The other oriented ZnO domains then grow on faceted (1011) ZnO with ZnO(0002)//ZnO(1011) and [2110]ZnO//[1101]ZnO with good coherency with the (1011)-oriented grains.

KW - Chemical vapor deposition

KW - GaN

KW - Thin films

KW - Transmission electron microscopy

KW - X-ray diffraction

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84921439459&partnerID=8YFLogxK

U2 - 10.1002/pssr.201409467

DO - 10.1002/pssr.201409467

M3 - Article

AN - SCOPUS:84921439459

VL - 9

SP - 92

EP - 94

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 1

ER -