It is reported that the nonuniformity of GaAs FET characteristics can be caused by nonuniformly distributed stresses across the wafer through the piezoelectric effect. This nonuniformity depends on the orientation of the devices on the wafer. On (100) oriented substrates, the characteristics of FETs oriented in the less than 011 greater than and less than 011 OVER BAR greater than directions have a strong dependence on their radial positions on the wafer. However, FETs oriented in the less than 001 greater than and less than 010 greater than directions do not display such dependence and, therefore, have better device uniformity. 6 refs.
|Title of host publication||Unknown Host Publication Title|
|Editors||David C. Look, John S. Blakemore|
|Publisher||Shiva Publ Ltd, Nantwich, Engl Also|
|Number of pages||7|
|State||Published - 1 Dec 1984|