ORIENTATION DEPENDENCE OF DEVICE UNIFORMITY IN GAAS INTEGRATED CIRCUITS.

C. P. Lee*, Mau-Chung Chang, P. M. Asbeck, L. D. Hou, R. P. Vahrenkamp, C. G. Kirkpatrick

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

It is reported that the nonuniformity of GaAs FET characteristics can be caused by nonuniformly distributed stresses across the wafer through the piezoelectric effect. This nonuniformity depends on the orientation of the devices on the wafer. On (100) oriented substrates, the characteristics of FETs oriented in the less than 011 greater than and less than 011 OVER BAR greater than directions have a strong dependence on their radial positions on the wafer. However, FETs oriented in the less than 001 greater than and less than 010 greater than directions do not display such dependence and, therefore, have better device uniformity. 6 refs.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
EditorsDavid C. Look, John S. Blakemore
PublisherShiva Publ Ltd, Nantwich, Engl Also
Pages347-353
Number of pages7
ISBN (Print)1850140316
StatePublished - 1 Dec 1984

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