Orientation control and dielectric properties of sol-gel deposited Ba (Ti, Zr)O3 thin films

Zhai Jiwei*, Yao Xi, Zhang Liangying, Shen Bo, Haydn Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

The effects of the mole concentrations of precursor solution on the microstructure and dielectric properties of sol-gel deposited BaZr 0.35Ti0.65O3 (BZT) thin films have been investigated. The films were of single perovskite phase with strong (100) preferred orientation when it were grown on LaNiO3 buffered Pt/Ti/SiO2/Si substrates using a diluted precursor solution. Variation of the precursor solution concentration resulted in a different microstructure and, in turn, affected the dielectric properties of the sol-gel deposited films. The BZT thin film showed a very stable and highly insulative characteristic against applied field. This work clearly reveals the highly promising potential of BZT compared with barium strontium titanium films for application in tunable microwave devices.

Original languageEnglish
Pages (from-to)341-347
Number of pages7
JournalJournal of Crystal Growth
Volume262
Issue number1-4
DOIs
StatePublished - 15 Feb 2004

Keywords

  • A1. Growth mechanism
  • A1. Surface orientation
  • A3. Chemical solution deposition
  • B1. Ferroelectric materials
  • B1. Perovskites

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