Organometallic vapor phase epitaxial growth of alasxsb1-xfilms using tertiarybutylarsine

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Abstract

The deposition of AlAsxSb1-x films is studied systematically using an organometallic vapor phase epitaxy growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAsxSb1-x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAsxSb1-x epitaxial films throughout the entire range of the solid composition for temperatures above 550°C.

Original languageEnglish
Pages (from-to)L402-L404
JournalJapanese Journal of Applied Physics
Volume33
Issue number3
DOIs
StatePublished - Mar 1994

Keywords

  • AlAsSb
  • Distribution coefficient
  • Miscibility gap
  • MOVPE

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