Organic thin-film transistors with low-temperature AlN film as gate insulator

Hsiao-Wen Zan*, Kuo Hsi Yen, Chien Hsun Chen, Pu Kuan Liu, Kuo Hsin Ku, Jennchang Hwang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

RF-ICP sputtered AlN film was used as the gate insulator in pentacene-based organic thin-film transistors (TFTs). With the dielectric breakdown field larger than 5 MVcm and the relative electrical permittivity as 7 in the AlN film, the proposed TFTs exhibit low operation voltage, low subthreshold swing (∼0.4 Vdecade) and high on/off current ratio (> 106). By adjusting the AlN sputtering process, it was found that smooth morphology of AlN film (surface roughness <2 Å) can be obtained by lowering down the process temperature. This atomically smooth dielectric surface leads to the growth of large pentacene grains and improves the leakage current and also the field effect mobility.

Original languageEnglish
Article number022701ESL
JournalElectrochemical and Solid-State Letters
Volume10
Issue number1
DOIs
StatePublished - 1 Jan 2007

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