We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AIN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.
|Number of pages||3|
|Journal||SID Conference Record of the International Display Research Conference|
|State||Published - 1 Dec 2005|
|Event||25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom|
Duration: 20 Sep 2005 → 22 Sep 2005