Organic thin-film transistors based on nanocomposite gate insulators for high-current driving applications

Chiao Shun Chuang*, Yung Sheng Lin, Li Jen Kung, Dong Sian Chen, Fang-Chung Chen, Han Ping D. Shieh

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

Highly performance organic thin-film transistors (OTFTs) incorporated with nanoparticles in the dielectric insulators have been demonstrated. The dielectric layers consist of cross-linked poly-4-vinylphenol (PVP) and high dielectric titanium dioxide (TiO2) nanoparticles. In order to increase the solubility of TiO2 nanoparticles in organic solutions, the surface of nanoparticles was modified with organosilozane. Moreover, the concern of higher leakage current, while using the nano-composite insulators, has been overcome by P8 treatment. In addition, several models, which have been used to describe the dielectric behavior of composite materials, are also discussed.

Original languageEnglish
Pages1045-1048
Number of pages4
StatePublished - 1 Dec 2005
EventIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan
Duration: 6 Dec 20059 Dec 2005

Conference

ConferenceIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
CountryJapan
CityTakamatsu
Period6/12/059/12/05

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