Organic photo transistors with drain bias modulation effect

Hsiao-Wen Zan*, Shih Chin Kao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the influence of light induced electrons on the threshold voltage shift of organic thin film transistors (OTFTs) was studied. The light induced electrons are formed and accumulated in the channel near the interface of gate dielectric. The light source can he used as second source. Therefore, the study demonstrates the light induced electrons in channel can be affected by drain bias like bias stress. The decreasing accumulated electrons with increasing positive drain bias lower the threshold voltage shift rate during illumination time. The opposite trend can be observed when using negative drain increases accumulated electrons. This result is helpful to adjust the photosensivity of organic photo transistors.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages249-252
Number of pages4
Edition9
DOIs
StatePublished - 1 Dec 2008
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 13 Oct 200816 Oct 2008

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period13/10/0816/10/08

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  • Cite this

    Zan, H-W., & Kao, S. C. (2008). Organic photo transistors with drain bias modulation effect. In ECS Transactions - Thin Film Transistors 9, TFT 9 (9 ed., pp. 249-252). (ECS Transactions; Vol. 16, No. 9). https://doi.org/10.1149/1.2980559