Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1 0 0) InP substrates

Z. C. Lin*, Sheng-Di Lin, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires.

Original languageEnglish
Pages (from-to)512-515
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number3
DOIs
StatePublished - 1 Jan 2008

Keywords

  • InP
  • MBE
  • Quantum-wire

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