Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1 0 0) InP substrates

Z. C. Lin; Sheng-Di Lin; C. P. Lee

doi:10.1016/j.physe.2007.07.005

Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1 0 0) InP substrates

Z. C. Lin^*, Sheng-Di Lin, C. P. Lee

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires.

Original language	English
Pages (from-to)	512-515
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	3
DOIs	https://doi.org/10.1016/j.physe.2007.07.005
State	Published - 1 Jan 2008

Keywords

InP
MBE
Quantum-wire

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10.1016/j.physe.2007.07.005

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title = "Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1 0 0) InP substrates",

abstract = "Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires.",

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T1 - Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1 0 0) InP substrates

AU - Lin, Z. C.

AU - Lin, Sheng-Di

AU - Lee, C. P.

PY - 2008/1/1

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N2 - Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires.

AB - Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires.

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