Abstract
Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires.
| Original language | English |
|---|---|
| Pages (from-to) | 512-515 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 40 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1 Jan 2008 |
Keywords
- InP
- MBE
- Quantum-wire
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Lin, Z. C., Lin, S-D., & Lee, C. P. (2008). Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1 0 0) InP substrates. Physica E: Low-Dimensional Systems and Nanostructures, 40(3), 512-515. https://doi.org/10.1016/j.physe.2007.07.005