Optoelectronic properties in vertically aligned ZnO/Si-nanopillars

Hsin Yi Lee*, Yuan Ming Chang, Wen Shou Tseng, Pin Hsu Kao, Hau Wei Wang, Hung Ming Tai, Leh Rong Chang, Chih Ming Lin, Jenh-Yih Juang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 μA/cm2 current density criterion is 0.74 V/μm with an estimated β 1.33×10 4. The low turn-on field and marked enhancement in β were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. On the other hand, room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on Si nanowires fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200°C, an intensive UV emission corresponding to free-exciton recombination was observed with a nearly complete suppression of the defect-associated broad visible range emission peak.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
StatePublished - 22 Nov 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 20 Aug 201223 Aug 2012

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380


Conference2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom


  • Atomic layer deposition
  • Si nanopillars
  • Ultrathin
  • ZnO

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