Optimum Doping Profile of Power MOSFET Epitaxial Layer

Xing Bi Chen, Xing Bi Chen, Chen-Ming Hu

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

The epitaxial layer resistance of a MOSFET can be slightly reduced by using an optimum doping profile, which exhibits a minimum in the upper half of the layer when the layer thickness is large compared to the cell-to-cell spacing. A gradual transition from the n epitaxial layer to the n+ substrate is desirable. When current spreading is significant, the resistance may rise as [Formula omitted] rather than [Formula omitted].

Original languageEnglish
Pages (from-to)985-987
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume29
Issue number6
DOIs
StatePublished - 1 Jan 1982

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