Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

Pei Hsuan Huang*, Hsun Wen Wang, Min An Tsai, Fang I. Lai, Shou Yi Kuo, Hao-Chung Kuo, Sien Chi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we design the InGaP/GaAs/Ge triple-junction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum I sc is 13.512 mA/cm 2, the open-circuit voltage (V oc) is 2.614 V, and the conversion efficiency (η) is 30.686 %. The enhancement of the I sc and the efficiency were 13.68 % and 12.24 %.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2071-2073
Number of pages3
DOIs
StatePublished - 1 Dec 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period19/06/1124/06/11

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    Huang, P. H., Wang, H. W., Tsai, M. A., Lai, F. I., Kuo, S. Y., Kuo, H-C., & Chi, S. (2011). Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2071-2073). [6186360] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186360