For deep submicron dual-gate CMOS application with poly-Si1-xGex gate technology, a Ge content of approximately 20% is the optimum choice in terms of short-channel effect (SCE) and poly-gate-depletion effect (PDE). It is demonstrated that poly-Si0.8Ge0.2-gated devices have the potential for alleviating the boron penetration problem without degrading gate oxide reliability as compared to poly-Si-gated devices.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Jan 1998|
|Event||Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 9 Jun 1998 → 11 Jun 1998