Optimized oxygen annealing process for Vth tuning of p-MOSFET with High-k/metal gate stacks

T. Kawanago*, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

A demonstration of VFB/Vth tuning has been conducted by optimized annealing in oxygen ambient for direct contact of high-k with Si gate stacks. The amount of oxygen atoms has been controlled by optimized annealing temperature and the thickness of the gate electrode. The shift in VFB has been confirmed irrespective of gate dielectric materials and the thickness. The Vth of pMOSFET can be controlled to positive direction by 520 mV without any EOT penalty. Once a shift in VFB/Vth is obtained, the values are found to be stable even after following forming gas annealing.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages301-304
Number of pages4
DOIs
StatePublished - 2010
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 14 Sep 201016 Sep 2010

Publication series

Name2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Conference

Conference2010 European Solid State Device Research Conference, ESSDERC 2010
CountrySpain
CitySevilla
Period14/09/1016/09/10

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    Kawanago, T., Lee, Y., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2010). Optimized oxygen annealing process for Vth tuning of p-MOSFET with High-k/metal gate stacks. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 301-304). [5618352] (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618352