Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation

Ya Chin King, Charles Kuo, Tsu Jae King, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A new method of growing multiple gate oxide thicknesses below 5 nm using masked oxygen implantation is presented. Multiple thicknesses can be achieved on the same wafer without degradation in the oxide properties. The oxygen implanted oxide quality is comparable to that of thermally grown oxides. Moreover, the effects of oxygen implant damage is minimized with higher implant energies, thicker sacrificial oxides, and low-temperature annealing.

Original languageEnglish
Pages (from-to)1279-1281
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume48
Issue number6
DOIs
StatePublished - 1 Jan 2001

Keywords

  • Dielectric films
  • Ion implantation
  • Oxidation
  • Reliability
  • Semiconductor device fabrication

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