Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation

Ya Chin King, Charles Kuo, Tsu Jae King, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


A new method of growing multiple gate oxide thicknesses below 5 nm using masked oxygen implantation is presented. Multiple thicknesses can be achieved on the same wafer without degradation in the oxide properties. The oxygen implanted oxide quality is comparable to that of thermally grown oxides. Moreover, the effects of oxygen implant damage is minimized with higher implant energies, thicker sacrificial oxides, and low-temperature annealing.

Original languageEnglish
Pages (from-to)1279-1281
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - 1 Jan 2001


  • Dielectric films
  • Ion implantation
  • Oxidation
  • Reliability
  • Semiconductor device fabrication

Fingerprint Dive into the research topics of 'Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation'. Together they form a unique fingerprint.

Cite this