Optimization of SiN film by varying precursor flow conditions and its impacts on strained channel NMOSFETs

Ching Sen Lu*, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we investigate the effect of precursor flow conditions on the properties of the SiN film deposited by PECVD, and the related impacts on the device performance as well as hot-carrier reliability of NMOSFETs. We found that SiN film with higher nitrogen content possess larger tensile stress and thus higher on-current. Moreover, lower hydrogen contained in the SiN boosts the immunity to hot-carrier stress. Both demands can be fulfilled by increasing the N2 gas flow rate during SiN deposition. The lateral distribution of interface state generation after hot-carrier stress was also investigated.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages117-120
Number of pages4
DOIs
StatePublished - 1 Dec 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 20 Dec 200722 Dec 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period20/12/0722/12/07

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    Lu, C. S., Lin, H-C., & Huang, T. Y. (2007). Optimization of SiN film by varying precursor flow conditions and its impacts on strained channel NMOSFETs. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 117-120). [4450076] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450076