Optimization of shallow and deep trench isolation structures for ultra-high-speed bipolar LSIs

N. Itoh, C. Yoshino, S. Matsuda, Y. Tsuboi, K. Inou, Y. Katsumata, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

Shallow and deep trench isolation structures for ultra-high-speed bipolar LSIs have been optimized in terms of process simplification and residual mechanical stress. Among several fabrication candidate methods, trenches filled by low-temperature deposition show good results.

Original languageEnglish
Title of host publicationBCTM 1992
Subtitle of host publicationProceedings - Bipolar/BiCMOS Circuits and Technology Meeting 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages104-107
Number of pages4
ISBN (Electronic)0780307275
DOIs
StatePublished - 1992
Event1992 Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 1992 - Minneapolis, United States
Duration: 7 Oct 19928 Oct 1992

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Volume1992-October
ISSN (Print)1088-9299

Conference

Conference1992 Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 1992
CountryUnited States
CityMinneapolis
Period7/10/928/10/92

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    Itoh, N., Yoshino, C., Matsuda, S., Tsuboi, Y., Inou, K., Katsumata, Y., & Iwai, H. (1992). Optimization of shallow and deep trench isolation structures for ultra-high-speed bipolar LSIs. In BCTM 1992: Proceedings - Bipolar/BiCMOS Circuits and Technology Meeting 1992 (pp. 104-107). [274073] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting; Vol. 1992-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BIPOL.1992.274073