### Abstract

We investigate the GaAs_{0.51}Sb_{0.49}/In_{0.53}Ga_{0.47}As negative-capacitance vertical-tunnel FET (NCVT-FET) to maximize its vertical tunneling over the corner tunneling. Negative capacitance enhances vertical tunneling more significantly than corner tunneling due to the amplified vertical electric field. By TCAD optimization of the device, small {I}_{{\mathrm {OFF}}} (10 pA/ \mu \text{m} ) and large {I}_{\text{ON}} ( 405~\mu \text{A}/\mu \text{m} ) at {V}_{\text {DD}} = {0.5} V with 14 mV/dec sub- {V}_{\text {t}} swing over 4 dec of current were obtained. Even at {V}_{\text {DD}} ={0.1} V, the optimized NCVT-FET has 10 pA/ \mu \text{m}~{I}_{\text{OFF}} , 5.86~\mu \text{A}/\mu \text{m}~{I}_{\text{ON}} ( 144\times higher than the nominal TFET), and {I}_{\text{ON}}/{I}_{\text{OFF}} ratio of {6} \times {10}^{{5}}.

Original language | English |
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Article number | 9079209 |

Pages (from-to) | 2593-2599 |

Number of pages | 7 |

Journal | IEEE Transactions on Electron Devices |

Volume | 67 |

Issue number | 6 |

DOIs | |

State | Published - Jun 2020 |

### Keywords

- Ferroelectric (FE)
- Heterojunction
- Negative capacitance (NC)
- Tunnel FET (TFET)

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## Cite this

*IEEE Transactions on Electron Devices*,

*67*(6), 2593-2599. [9079209]. https://doi.org/10.1109/TED.2020.2986793