Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD

Q. Yang, Q. J. Hartmann, A. P. Curtis, Chun-Hsiung Lin, D. A. Ahmari, D. Scott, Hao-Chung Kuo, Haydn Chen, G. E. Stillman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal X-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HRTEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In 0.5 Ga 0.5 As at the GaAs-to-InGaP interface and 1 ML of In 0.65 Ga 0.15 P 0.15 As 0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as dc characteristics.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages95-98
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
StatePublished - 1 Jan 1997
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: 8 Sep 199711 Sep 1997

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period8/09/9711/09/97

Fingerprint Dive into the research topics of 'Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD'. Together they form a unique fingerprint.

  • Cite this

    Yang, Q., Hartmann, Q. J., Curtis, A. P., Lin, C-H., Ahmari, D. A., Scott, D., Kuo, H-C., Chen, H., & Stillman, G. E. (1997). Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 95-98). [711571] (Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711571