Optimization of gate insulator material for GaN MIS-HEMT

Y. C. Lin, T. W. Lin, C. H. Wu, J. N. Yao, H. T. Hsu, W. C. Shih, K. Kakushima, K. Tsutsui, H. Iwai, E. Y. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages115-118
Number of pages4
ISBN (Electronic)9781467387682
DOIs
StatePublished - 25 Jul 2016
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: 12 Jun 201616 Jun 2016

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2016-July
ISSN (Print)1063-6854

Conference

Conference28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period12/06/1616/06/16

Keywords

  • Ga HEMT
  • HfO
  • LaO
  • MIS
  • power device
  • SiO

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    Lin, Y. C., Lin, T. W., Wu, C. H., Yao, J. N., Hsu, H. T., Shih, W. C., Kakushima, K., Tsutsui, K., Iwai, H., & Chang, E. Y. (2016). Optimization of gate insulator material for GaN MIS-HEMT. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 115-118). [7520791] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520791