Optimization of broadband RF performance and ESD robustness by π-model distributed ESD protection scheme

Ming-Dou Ker*, Bing Jye Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Large electrostatic discharge (ESD) protection devices close to the I/O pins, beneficial for ESD protection, have an adverse effect on the performance of broadband RF circuits for impedance mismatch and bandwidth degradation. A new proposed ESD protection structure, π-model distributed ESD (π-DESD) protection circuit, composed of one pair of ESD devices near the I/O pin, the other pair close to the core circuit, and a coplanar waveguide with under-grounded shield (CPWG) connecting these two pairs, can successfully achieve both excellent ESD robustness and good broadband RF performance. Cooperating with the active power-rail ESD clamp circuit, the experimental chip in a 0.25-μm CMOS process can sustain the human-body-model (HBM) ESD stress of 8kV.

Original languageEnglish
Title of host publication2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
DOIs
StatePublished - 1 Dec 2004
Event2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 - Grapevine, TX, United States
Duration: 19 Sep 200423 Sep 2004

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Conference

Conference2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
CountryUnited States
CityGrapevine, TX
Period19/09/0423/09/04

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    Ker, M-D., & Kuo, B. J. (2004). Optimization of broadband RF performance and ESD robustness by π-model distributed ESD protection scheme. In 2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 [5272640] (Electrical Overstress/Electrostatic Discharge Symposium Proceedings). https://doi.org/10.1109/EOSESD.2004.5272640