Optimal Te-doping in GaSe for non-linear applications

Shin An Ku*, Wei Chen Chu, Chih-Wei Luo, Yu M. Andreev, Grigory Lanskii, Anna Shaidukoi, Tatyana Izaak, Valery Svetlichnyi, Kaung-Hsiung Wu, T. Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Centimeter-sized Te-doped GaSe ingots were grown from the charge compositions of GaSe with nominals 0.05, 0.1, 0.5, 1, and 3 mass% Te, which were identified as εGaSe:Te (0.01, 0.07, 0.38, 0.67, and 2.07 mass%) single crystals. The evolution of the absorption peaks of the phonon modes E' (2) (∼0.584 THz) and E"(2) (1.77 THz) on Te-doping in GaSe:Te crystals was studied by THz time-domain spectroscopy. This study proposes that the evolution of both E'(2) and E"(2) absorption peaks correlates well with the optical quality of Te-doped GaSe crystals, which was confirmed by experimental results on the efficiency of THz generation by optical rectification. Maximal intensity of the absorption peak of the rigid layer mode E'(2) is proposed as a criterion for identification of optimal Te-doping in GaSe crystals.

Original languageEnglish
Pages (from-to)5029-5037
Number of pages9
JournalOptics Express
Volume20
Issue number5
DOIs
StatePublished - 27 Feb 2012

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