Optimal geometry aspect ratio of ellipse-shaped-surrounding-gate nanowire field effect transistors

Yi-ming Li*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Theoretically ideally round shape of the surrounding gate may not always guarantee because of limitations of the fabrication process in surrounding-gate nanowire field effect transistors (FETs). These limitations may lead to the formation of an ellipse-shaped surrounding gate with major and minor axes of different lengths. In this paper, we for the first time study the electrical characteristics of ellipse-shaped-surrounding-gate silicon nanowire FETs with different ratio of the major and minor axes. By simultaneously simulating engineering acceptable magnitudes of the threshold voltage rolloff, the drain induced barrier lowering, the subthreshold swing, and the on-/off-state current ratio, an optimal geometry aspect ratio between the channel length and the major and minor axes of the ellipse-shaped-surrounding-gate nanowire FET is concluded.

Original languageEnglish
Pages (from-to)920-923
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number1
DOIs
StatePublished - 1 Jan 2016

Keywords

  • Electrical characteristics
  • Ellipse-shaped
  • Fabrication process
  • Geometry aspect ratio
  • Major and minor axes
  • Manufacturability
  • Nanowire FET
  • Surrounding gate

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