Optimal doping profile of MOSFETs using geometric programming

Ying Chieh Chen, Yiming Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study employs a novel geometric programming technique to optimize the doping profile of metal semiconductor oxide field effect transistor (MOSFET) subject to specified device characteristics, such as the threshold voltage, the on- and off-state currents and the subthreshold swing. The optimal design of doping profiles for MOSFET devices is for the first time formulated as a geometric programming problem. This special type of optimization problems can be transformed into a convex optimization problem, and therefore can be solved globally and efficiently. For targeting a designed threshold voltage as well as obtaining a high transconductance, the doping distribution of an examined MOSFET device is extracted. Consequently, various constrains of DC characteristics are estimated to obtain the desired doping profile. The approach provides an alternative way to accelerate the design of doping profile process and benefits the manufacturing of MOS devices.

Original languageEnglish
Title of host publicationComputational Methods in Science and Engineering - Advances in Computational Science, Lectures Presented at the Int. Conference on Computational Methods in Science and Engineering 2008, ICCMSE 2008
Pages458-461
Number of pages4
DOIs
StatePublished - 2009
Event6th International Conference on Computational Methods in Sciences and Engineering 2008, ICCMSE 2008 - Hersonissos, Crete, Greece
Duration: 25 Sep 200830 Sep 2008

Publication series

NameAIP Conference Proceedings
Volume1148 2
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference6th International Conference on Computational Methods in Sciences and Engineering 2008, ICCMSE 2008
CountryGreece
CityHersonissos, Crete
Period25/09/0830/09/08

Keywords

  • DC Characteristics
  • Doping Profile
  • Geometry Programming
  • MOSFET

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