Optimal design of triple-gate devices for high-performance and low-power applications

Meng-Hsueh Chiang; Jeng-Nan Lin; Keunwoo Kim; Ching-Te Chuang

doi:10.1109/TED.2008.927664

Optimal design of triple-gate devices for high-performance and low-power applications

Meng-Hsueh Chiang, Jeng-Nan Lin, Keunwoo Kim, Ching-Te Chuang

Department of Electronics Engineering

Research output: Contribution to journal › Article

6 Scopus citations

Abstract

Pragmatic design of triple-gate (TG) devices is presented by considering corner effects, short-channel effects, and channel-doping profiles. A novel TG MOSFET structure with a polysilicon gate process is proposed using asymmetrical (n(+)/p(+)) polysilicon gates. CMOS-compatible V-T's for high-performance circuit applications can be achieved for both nFET and pFET. The superior subthreshold characteristics and device performance are analyzed and validated by 3-D numerical simulations. Comparisons of device characteristics with a midgap metal gate are presented.

Original language	English
Pages (from-to)	2423-2428
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	9
DOIs	https://doi.org/10.1109/TED.2008.927664
State	Published - Sep 2008

Keywords

corner effects; polysilicon gate; triple-gate (TG); MOSFETs
CMOS

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Chiang, M-H., Lin, J-N., Kim, K., & Chuang, C-T. (2008). Optimal design of triple-gate devices for high-performance and low-power applications. IEEE Transactions on Electron Devices, 55(9), 2423-2428. https://doi.org/10.1109/TED.2008.927664

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AB - Pragmatic design of triple-gate (TG) devices is presented by considering corner effects, short-channel effects, and channel-doping profiles. A novel TG MOSFET structure with a polysilicon gate process is proposed using asymmetrical (n(+)/p(+)) polysilicon gates. CMOS-compatible V-T's for high-performance circuit applications can be achieved for both nFET and pFET. The superior subthreshold characteristics and device performance are analyzed and validated by 3-D numerical simulations. Comparisons of device characteristics with a midgap metal gate are presented.

KW - corner effects; polysilicon gate; triple-gate (TG); MOSFETs

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