Abstract
Pragmatic design of triple-gate (TG) devices is presented by considering corner effects, short-channel effects, and channel-doping profiles. A novel TG MOSFET structure with a polysilicon gate process is proposed using asymmetrical (n(+)/p(+)) polysilicon gates. CMOS-compatible V-T's for high-performance circuit applications can be achieved for both nFET and pFET. The superior subthreshold characteristics and device performance are analyzed and validated by 3-D numerical simulations. Comparisons of device characteristics with a midgap metal gate are presented.
Original language | English |
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Pages (from-to) | 2423-2428 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 55 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2008 |
Keywords
- corner effects; polysilicon gate; triple-gate (TG); MOSFETs
- CMOS