Optimal design of P-buffer layer for GaAs power MESFET

Y. J. Wang, Chin-Chun Meng*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The mechanisms for current conduction in the substrate of planar ion-implanted GaAs power MESFETs for wireless communication are investigated by 2D simulation. A properly doped p-buffer layer can eliminate the substrate conduction, but a too heavily doped p-buffer can reduce the saturation current (Idss) and the breakdown voltage significantly. Optimal design for the p-buffer of the MESFETs is described.

Original languageEnglish
Pages (from-to)2282-2283
Number of pages2
JournalElectronics Letters
Volume32
Issue number24
DOIs
StatePublished - 1 Jan 1996

Keywords

  • Ion implantation
  • MESFET
  • Power MESFET
  • Power transistors

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