Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

Ming Hao Kuo, Meng Chun Lee, Che Wei Tien, Wei Ting Lai, Pei-Wen Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge-dot/SiO2/SiGe-channel photoMOSFETs are demonstrated on Si substrate. A decrease in the dot size and gate oxide thickness significantly enhances the photoresponsivity (9000A/W) with 6nW under 850nm illumination, and improves response time (0.48ns) and power consumption.

Original languageEnglish
Title of host publication2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580231
DOIs
StatePublished - 31 May 2017
Event2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Los Angeles, United States
Duration: 19 Mar 201723 Mar 2017

Publication series

Name2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings

Conference

Conference2017 Optical Fiber Communications Conference and Exhibition, OFC 2017
CountryUnited States
CityLos Angeles
Period19/03/1723/03/17

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  • Cite this

    Kuo, M. H., Lee, M. C., Tien, C. W., Lai, W. T., & Li, P-W. (2017). Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics. In 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings [7937406] (2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/OFC.2017.W2A.7