Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

Ming Hao Kuo, M. C. Lee, J. W. Tien, Wei Ting Lai, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ge-dot/SiO2/SiGe-channel photoMOSFETs are demonstrated on a Si-photonics platform. The photoMOSFET is fabricated in standard CMOS processes with a self-organized gate stack of Ge-dot/SiO2/SiGe-channel using thermal oxidation of SiGe nanopillars over Si3N4 layers on Si substrates. The Ge-dot photoMOSFET, with 3μm channel length and 70μm channel width, features responsivity of over 2000A/W and 100A/W with 6pW and 0.2μW, respectively, under illumination at 850nm. The responsivity is further improved by reducing the dot size and increasing the spatial density and most importantly, is insensitive to the gate oxide thickness, which is a great benefit for reducing the input capacitance and thus, improving speed and power consumption.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages212-213
Number of pages2
ISBN (Electronic)9781509007264
DOIs
StatePublished - 27 Sep 2016
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 12 Jun 201613 Jun 2016

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
CountryUnited States
CityHonolulu
Period12/06/1613/06/16

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