Optically pumped GaN-based vertical cavity surface emitting laser at room temperature

Jung Tang Chu*, W. D. Liang, C. C. Kao, H. W. Huang, Tien-Chang Lu, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The optically pumped lasing action at 414 nm was obtained from a GaN-based VCSEL with an InGaN multiple quantum wells and two dielectric DBRs fabricated by laser lift-off. The threshold pumping energy is 270 nJ at room temperature conditions.

Original languageEnglish
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
Pages293-294
Number of pages2
DOIs
StatePublished - 1 Dec 2005
EventPacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 - Tokyo, Japan
Duration: 11 Jul 200515 Jul 2005

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume2005

Conference

ConferencePacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
CountryJapan
CityTokyo
Period11/07/0515/07/05

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