Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain

H. Shen, M. Wraback, J. Pamulapati, M. Taysing-Lara, W. Zhou, M. Dutta, Y. Lu, H. C. Kuo

Research output: Contribution to journalConference articlepeer-review

Abstract

Lift-off thin films of GaAs/A1GaAs multiple quantum wells (MQW) have been bondedto different transparent substrates which possess either direction independent or directiondependent thermal expansion. Due to the differential thermal expansion between the thin filmand the much thicker substrate, the MQW is under a thermally induced in-plane strain. Byproper choice of the substrate crystallographic orientation and bonding temperature various formsof in-plane anisotropic strain have been realized. A detailed study of the anisotropy in thecomplex refractive index resulting from the inplane anisotropic strain is presented. The electricfield dependence of the anisotropic absorption and birefringence has also been studied.

Original languageEnglish
Pages (from-to)199-205
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2141
DOIs
StatePublished - 26 May 1994
EventSpectroscopic Characterization Techniques for Semiconductor Technology V 1994 - Los Angeles, United States
Duration: 23 Jan 199429 Jan 1994

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