Lift-off thin films of GaAs/A1GaAs multiple quantum wells (MQW) have been bondedto different transparent substrates which possess either direction independent or directiondependent thermal expansion. Due to the differential thermal expansion between the thin filmand the much thicker substrate, the MQW is under a thermally induced in-plane strain. Byproper choice of the substrate crystallographic orientation and bonding temperature various formsof in-plane anisotropic strain have been realized. A detailed study of the anisotropy in thecomplex refractive index resulting from the inplane anisotropic strain is presented. The electricfield dependence of the anisotropic absorption and birefringence has also been studied.
|Number of pages||7|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 26 May 1994|
|Event||Spectroscopic Characterization Techniques for Semiconductor Technology V 1994 - Los Angeles, United States|
Duration: 23 Jan 1994 → 29 Jan 1994