Optical studies of InxGa1-xAs/GaAs strained-layer quantum wells

Kai-Feng Huang*, K. Tai, S. N.G. Chu, A. Y. Cho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

Intense single-peak photoluminescences of free-exciton origin were observed in InxGa1-x As/GaAs strained-layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained-layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton-phonon coupling was determined by temperature-dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/Al xGa1-x As quantum wells.

Original languageEnglish
Pages (from-to)2026-2028
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number20
DOIs
StatePublished - 1 Dec 1989

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