Optical studies of InxGa1-xAs/GaAs strained-layer quantum wells

Kai-Feng Huang; K. Tai; S. N.G. Chu; A. Y. Cho

doi:10.1063/1.101181

Optical studies of In_xGa_1-xAs/GaAs strained-layer quantum wells

Kai-Feng Huang^*, K. Tai, S. N.G. Chu, A. Y. Cho

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Intense single-peak photoluminescences of free-exciton origin were observed in In_xGa_1-x As/GaAs strained-layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained-layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton-phonon coupling was determined by temperature-dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/Al _xGa_1-x As quantum wells.

Original language	English
Pages (from-to)	2026-2028
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	20
DOIs	https://doi.org/10.1063/1.101181
State	Published - 1 Dec 1989

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@article{e15fc75f94e54438902db7c6405710f6,

title = "Optical studies of InxGa1-xAs/GaAs strained-layer quantum wells",

abstract = "Intense single-peak photoluminescences of free-exciton origin were observed in InxGa1-x As/GaAs strained-layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained-layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton-phonon coupling was determined by temperature-dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/Al xGa1-x As quantum wells.",

author = "Kai-Feng Huang and K. Tai and Chu, {S. N.G.} and Cho, {A. Y.}",

year = "1989",

month = dec,

day = "1",

doi = "10.1063/1.101181",

language = "English",

volume = "54",

pages = "2026--2028",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Optical studies of InxGa1-xAs/GaAs strained-layer quantum wells

AU - Huang, Kai-Feng

AU - Tai, K.

AU - Chu, S. N.G.

AU - Cho, A. Y.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Intense single-peak photoluminescences of free-exciton origin were observed in InxGa1-x As/GaAs strained-layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained-layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton-phonon coupling was determined by temperature-dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/Al xGa1-x As quantum wells.

AB - Intense single-peak photoluminescences of free-exciton origin were observed in InxGa1-x As/GaAs strained-layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained-layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton-phonon coupling was determined by temperature-dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/Al xGa1-x As quantum wells.

UR - http://www.scopus.com/inward/record.url?scp=0000252161&partnerID=8YFLogxK

U2 - 10.1063/1.101181

DO - 10.1063/1.101181

M3 - Article

AN - SCOPUS:0000252161

VL - 54

SP - 2026

EP - 2028

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -