Optical studies of GaAs nanowires grown on trenched Si(001) substrate by cathodoluminescence

Ling Lee*, Kun Feng Chien, Wen Chung Fan, Wu-Ching Chou, Chih Hsin Ko, Cheng Hsien Wu, You Ru Lin, Cheng Tien Wan, Clement H. Wann, Chao Wei Hsu, Yung Feng Chen, Yan Kuin Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The strains in GaAs nanowires, which were grown from 1700- to 80-nm-wide trenches on the Si(001) wafer with SiO 2 masks, were investigated by cathodoluminescence. For 1700- to 500-nm-wide trenches, the in-plane tensile strain at 15 K decreases with the decreasing trench width. The strain increases abruptly when the trench width is 300 nm, and then decreases as the trench width is further decreased. The results revealed that the stress induced by the SiO 2 sidewalls dominates when the width is less than the depth of the trench. This approach provides an effective technique to measure the strain of a single nanowire and helps for the demonstration of selectively-grown GaAs with a designed strain.

Original languageEnglish
Article number06FG15
JournalJapanese Journal of Applied Physics
Volume51
Issue number6 PART 2
DOIs
StatePublished - 1 Jun 2012

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