In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.
|Number of pages||5|
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Published - 22 Jul 2009|
- Inverted pyramid sidewalls (IPSs)
- Wet etching