Optical simulation and fabrication of nitride-based LEDs with the inverted pyramid sidewalls

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, Cheng-Huang Kuo, C. J. Tun

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.

Original languageEnglish
Article number5166477
Pages (from-to)1264-1268
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number4
DOIs
StatePublished - 22 Jul 2009

Keywords

  • Inverted pyramid sidewalls (IPSs)
  • LED
  • Simulation
  • Wet etching

Fingerprint Dive into the research topics of 'Optical simulation and fabrication of nitride-based LEDs with the inverted pyramid sidewalls'. Together they form a unique fingerprint.

  • Cite this

    Kuo, C. W., Lee, Y. C., Fu, Y. K., Tsai, C. H., Wu, M. L., Chi, G. C., Kuo, C-H., & Tun, C. J. (2009). Optical simulation and fabrication of nitride-based LEDs with the inverted pyramid sidewalls. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1264-1268. [5166477]. https://doi.org/10.1109/JSTQE.2009.2015335