Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate

Yi Keng Fu*, Yu Hsuan Lu, Rong Xuan, Chia Hsin Chao, Yan Kuin Su, Jenn-Fang Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively.

Original languageEnglish
Article number6122049
Pages (from-to)488-490
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number6
DOIs
StatePublished - 7 Mar 2012

Keywords

  • Chemical wet-etching
  • GaN
  • Light extraction
  • Near-ultraviolet light-emitting diode (NUV LED)
  • Simulation

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