Zn1-xMnxSe (x ≤ 0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward  by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn1-xMnrSe (0 ≤ x ≤ 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type 1b instead of type 1c. The force constants FMnSe = 2.81 × 106 amu·cm-2 and FZnSe = 3.96 × 106 amu·cm-2 were obtained.
|Number of pages||8|
|Journal||Chinese Journal of Physics|
|State||Published - 1 Dec 1998|